Eu-Doped GaN Red LEDs for Next-Generation Micro-LED Displays

抄録

The development of efficient red light-emitting diodes (LEDs) based on GaN is pivotal to ultra-compact, full-color, and high-resolution micro-LED (μ-LED) displays. In red LEDs using Eu-doped GaN (GaN : Eu), the peak position of the emission is extremely stable with respect to ambient temperature and injected current. The output power of the red LED has already proceeded to 1 mW due to the intrinsic and extrinsic control of Eu emission. The effect of carrier sidewall-related non-radiative recombination on photoluminescence quantum efficiency is negligible due to the limited carrier diffusion length of GaN : Eu. We also demonstrate a monolithic vertical stack full-color LED consisting of GaN : Eu and InGaN quantum wells.