抄録
Physical models and algorithms for device simulation for high-speed image sensors are proposed. To obtain consistent basic equations for both the device and wave optical simulations, the electromagnetic scalar field is newly introduced to realize current injection and absorption at electrode surfaces and carrier generation-recombination in semiconductors. The propagation of an electromagnetic field induced by electrodes can be considered by using the proposed equations and similar algorithms as used in the FDTD method in device simulation. The 1D field propagations in silicon and Si3N4 are calculated by ignoring magnetic field. It is shown that the proposed equations and algorithms can realize device simulation for high-speed image sensors by considering field propagation in semiconductors.
