抄録
We report the development of 4"full color FED devices with the reliability analysis. Each pixel is composed of 4900 tips, which results in 80 million tips for 4"color diagonal panel. The hole pattern of the chromium gate is maintained at 1.1±0.1μm. The low voltage phosphors such as Y_2O_2S : Eu, ZnS : (Ag, Cl, Al), ZnS : (Cu, Al, I) for red, blue and green with special surface treatments are developed and their related screening technologies are studied with electrical analysis. The fully moving images are displayed at the anode bias of 250 volts. The emission current profile of the field emission for the color anode is well investigated with the color anode patterning. We analyze the relationship between the electron emission profile on the full panel. The brightness at white color mode of color FED is approximately 80cd/m^2.
