抄録
A p-channel poly-Si CMTFT (Conductivity Modulated Thin-Film Transistor) is demonstrated and experimentally characterized. The transistor uses the concept of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. This structure can provide 1.5 to 2 orders of magnitude higher on-state current than that of the conventional offset drain TFT at drain voltage ranging from -15V to -5V while still maintaining low leakage current and simplicity in device operation. The p-channel CMTFT can be combined with the n-channel CMTFT to form CMOS high voltage drivers, which is very suitable for use in fully integrated large area electronic applications.
