主催: 電気・情報関係学会九州支部連合大会委員会
会議名: 平成30年度電気・情報関係学会九州支部連合大会
回次: 71
開催地: 大分大学
開催日: 2018/09/27 - 2018/09/28
In recent years, in order to realize a low-carbon society, power electronics equipment is required to have high efficiency and miniaturization. Therefore, next generation power modules using wide bandgap semiconductors with characteristics such as low loss, high heat resistance and high speed have been drawing attention. In this paper, a three - phase inverter was fabricated by applying SiC power module using Ni micro - plating bonding with low parasitic inductance and high heat resistance. Next, the characteristics of inverter efficiency are evaluated by experiments and reported.