抄録
Low-temperature processing of solution-derived ferroelectric thin films comprises various approaches to decrease the crystallization temperature of the target crystalline phase to the values which would render the films compatible for integration in electronic devices. Beside the solution chemistry, nucleation layers and design of the deposition and heating profile, additional approaches are discussed in the paper. They include activation of amorphous films including UV or photochemical activation, laser activation or microwave heating. Hydrothermal growth of thin films is also discussed.
