抄録
In this study, Si2N2O particles intended for use as radiative cooling materials were synthesized by heat-treatment of mixtures of Si and SiO2 powders in an N2 atmosphere at 1450°C. The resulting Si2N2O particles were used as Si2N2O coatings on Al substrates as a radiative cooling device, and these coatings were generated using pulsed electrophoretic deposition. The average difference in temperature from the ambient temperature of the SSRM devices with the film thicknesses of 6.5, 13.2 and 35.2 µm were −0.82, −0.44 and +0.83°C, respectively. A radiative cooling effect was observed for the device with the film thicknesses of 6.5 and 13.2 µm.
