23aB4 GaAs高指数基板上にMBE成長させたAlAs膜の横方向酸化(エピタキシャル成長I)
1999 年 26 巻 2 号 p. 89-
詳細
1999 年 26 巻 2 号 p. 89-
Characteristic of the lateral wet oxidation of AlAs layer was changed by the MBE growth condition of AlAs layer. Diffusion controlled oxidation process changes to interface reaction contorolled one when the As/Al flux ratio becomes more than 8.5.
