抄録
Characterization of GaN grown by FACELO (Facet Controlled ELO) technique was carried out. Dislocation density of GaN epitaxial layer was reduced to the order of 10^6cm^<-2> via FACELO. It was also found that tilt of c-axis of the FACELO GaN was small. Temperature dependence of PL spectra of the FACELO GaN shows quality of the crystal was fairly good.
