シリコンウエハの鏡面仕上 (第2報)
シリコンウエハ研磨面の温度分布と平面度
1990 年 56 巻 6 号 p. 1046-1051
詳細
1990 年 56 巻 6 号 p. 1046-1051
This paper explains how the temperature of Si wafers during polishing affects their flatness after polishing. During the polishing operation, the temperature distribution of the wafer was measured using thermistor sensors (0.1 K accuracy) attached to the wafer opposite the surface being polished. It is made clear that this distribution is affected by the pouring method and temperature of the polishing reagent. The temperature near the center of the Si wafer during polishing is about 1.0 K higher than that of the surrounding area. As a result, chemical action is activated, increasing the stock removal rate at the center, and the polishing wafer is out of flat by 0.6-1.2μm in a concave direction.
