ECRプラズマを用いた高品質薄膜形成

天沢 敬生; 及川 秀男; 廣野 滋; 松尾 誠太郎

doi:10.2493/jjspe.66.511

ECRプラズマを用いた高品質薄膜形成

天沢敬生, 及川秀男, 廣野滋, 松尾誠太郎

著者情報

ジャーナルフリー

2000 年 66 巻 4 号 p. 511-516

DOI https://doi.org/10.2493/jjspe.66.511

詳細

発行日: 2000/04/05 受付日: 2000/02/09 J-STAGE公開日: 2009/04/10 受理日: - 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/04/10 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) S. Matsuo, M. Kiuchi and T. Ono : ECR Low-Energy Ion Equipment and Its Application to Deposition and Etching, Proc. 10th Symp. Ion Sources and Ion-Assisted Technology'86, Tokyo, (1986) 471.
2) T. Ono, C. Takahashi and S. Matsuo : Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering, Jpn. J. Appl. Phys., 23, 8, (1984) L 534.
3) C. Takahashi, M. Kiuchi, T. Ono and S. Matsuo :An Electron Cyclotron Resonance Plasma Deposition Technique Employing Magnetron Mode Sputtering, J. Vac. Sci. Technol., A 6, 4, (1988) 2348.
4) T. Ono, H. Nishimura, M. Shimada and S. Matsuo : Electron Cyclotron Resonance Plasma Source for Conductive Film Deposition, J. Vac. Sci. Technol., A 12, 4, (1994) 1281.
5) M. Shimada, T. Ono, H. Nishimura and S. Matsuo : Application of Electron Cyclotron Resonance Plasma Source to Conductive Film Deposition, J. Vac. Sci. Technol., A 13, 3, (1995) 815.
6) T. Amazawa, T. Ono, M. Shimada, S. Matsuo and H. Oikawa : Ultrathin Oxide Films Deposited Using Electron Cyclotron Resonance Sputter, J. Vac. Sci. Technol., B 17, 5, (1999) 2222.
7) M. Shimada, T. Amazawa, T. Ono, S. Matsuo ?? and H. Oikawa : Ultrathin A1₂O₃ and AIN Films Deposited by Reactive Sputter Using Advanced Electron Cyclotron Resonance Plasma Source, Proc. Fifth Int. Symp. Sputtering and Plasma Processes (ISSP '99), (1999) 123.
8) K. Ikuta, M. Tsukada and H. Nishimura : Low-Temperature Deposition of SrTiO₃ Thin Films by Electron-Cyclotron-Resonance Sputtering for Monolithic Microwave Integrated Circuits Operating in the mm-Wave Band, Jpn. J. Appl. Phys., 37, Pt. 1, 4 A, (1998) 1960.
9) H. Nishimura, T. Ono, M. Oda and S. Matsuo : Tantalum Metallization Using an Electron-Cyclotron-Resonance Plasma Source Coupled with Divided Microwaves, J. Vac. Sci. Technol., A 15, 3, (1997) 707.
10) T. Ono, T. Amazawa, H. Nishimura and S. Matsuo : Tantalum and Tantalum Nitride Films Deposited by Electron Cyclotron Resonance Sputtering as Barriers to Copper Diffusion, J. Vac. Sci. Technol., B 17, 5, (1999) 2385.
11) J. Gao, H. Nakashima, J. Wang, K. Iwanaga, D. Gao, K. Furukawa and K. Muraoka : Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-Type Electro ?? Cyclotron Resonance (ECR) Plasma, Jpn. J. Appl. Phys., 38, Pt. 2,11 B, (1999) L. 1293.
12) S. Hirono, S. Umemura, Y. Andoh, T. Hayashi and R. Kaneko : High Wear Durability of ECR-Sputtered Carbon Films, IEEE Trans. MAG., 14, (1998) 1729.
14) R. Kaneko, S. Oguchi, T. Miyamoto, Y. Andoh and S. Miyamoto : Micro-tribology for Magnetic Recording, STLE Special Publication, SP-29, (1990) 31.

Right : 1) S. Matsuo, M. Kiuchi and T. Ono : ECR Low-Energy Ion Equipment and Its Application to Deposition and Etching, Proc. 10th Symp. Ion Sources and Ion-Assisted Technology'86, Tokyo, (1986) 471.
2) T. Ono, C. Takahashi and S. Matsuo : Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering, Jpn. J. Appl. Phys., 23, 8, (1984) L 534.
3) C. Takahashi, M. Kiuchi, T. Ono and S. Matsuo :An Electron Cyclotron Resonance Plasma Deposition Technique Employing Magnetron Mode Sputtering, J. Vac. Sci. Technol., A 6, 4, (1988) 2348.
4) T. Ono, H. Nishimura, M. Shimada and S. Matsuo : Electron Cyclotron Resonance Plasma Source for Conductive Film Deposition, J. Vac. Sci. Technol., A 12, 4, (1994) 1281.
5) M. Shimada, T. Ono, H. Nishimura and S. Matsuo : Application of Electron Cyclotron Resonance Plasma Source to Conductive Film Deposition, J. Vac. Sci. Technol., A 13, 3, (1995) 815.
6) T. Amazawa, T. Ono, M. Shimada, S. Matsuo and H. Oikawa : Ultrathin Oxide Films Deposited Using Electron Cyclotron Resonance Sputter, J. Vac. Sci. Technol., B 17, 5, (1999) 2222.
7) M. Shimada, T. Amazawa, T. Ono, S. Matsuo and H. Oikawa : Ultrathin A1₂O₃ and AIN Films Deposited by Reactive Sputter Using Advanced Electron Cyclotron Resonance Plasma Source, Proc. Fifth Int. Symp. Sputtering and Plasma Processes (ISSP '99), (1999) 123.
8) K. Ikuta, M. Tsukada and H. Nishimura : Low-Temperature Deposition of SrTiO₃ Thin Films by Electron-Cyclotron-Resonance Sputtering for Monolithic Microwave Integrated Circuits Operating in the mm-Wave Band, Jpn. J. Appl. Phys., 37, Pt. 1, 4 A, (1998) 1960.
9) H. Nishimura, T. Ono, M. Oda and S. Matsuo : Tantalum Metallization Using an Electron-Cyclotron-Resonance Plasma Source Coupled with Divided Microwaves, J. Vac. Sci. Technol., A 15, 3, (1997) 707.
10) T. Ono, T. Amazawa, H. Nishimura and S. Matsuo : Tantalum and Tantalum Nitride Films Deposited by Electron Cyclotron Resonance Sputtering as Barriers to Copper Diffusion, J. Vac. Sci. Technol., B 17, 5, (1999) 2385.
11) J. Gao, H. Nakashima, J. Wang, K. Iwanaga, D. Gao, K. Furukawa and K. Muraoka : Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-Type Electron Cyclotron Resonance (ECR) Plasma, Jpn. J. Appl. Phys., 38, Pt. 2,11 B, (1999) L. 1293.
12) S. Hirono, S. Umemura, Y. Andoh, T. Hayashi and R. Kaneko : High Wear Durability of ECR-Sputtered Carbon Films, IEEE Trans. MAG., 14, (1998) 1729.
14) R. Kaneko, S. Oguchi, T. Miyamoto, Y. Andoh and S. Miyamoto : Micro-tribology for Magnetic Recording, STLE Special Publication, SP-29, (1990) 31.

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