レーザー蒸着YBa₂Cu₃O_7−x薄膜の配向性に及ぼす冷却時酸素分圧の影響

抄録

Oxygen partial pressure during cooling after deposition dependence of crystalline orientation of ArF pulse laser deposited YBa₂Cu₃O_7−x was studied. The crystalline orientation of films deposited in a low oxygen partial pressure was found to change dependent on oxygen partial pressure during cooling after deposition by regrowth in solid phase. In order to investigate the regrowth behavior, magnetization measurements were carried out with respect to films of different thickness fabricated by an Ar ion beamthinning technique.