抄録
Molecular dynamics simulations of the Ni/Pd film formation process were performed by employing the embedded atom method (EAM) and the Morse potential method, and the differences were clarified in terms of the interface structure. The EAM results revealed the dependence of the strain in Ni layers at the interface on the kinetic energy of the incident atoms, and agreed well with the results of experiments. The tendencies of the film formation process and the interdiffusion at the interface were similar in both the Morse and EAM potential cases.
