Auger Depth Profiling Analysis Using Inclined Holder

抄録

  We have investigated the high depth resolution Auger depth profiling using an inclined holder. The developed inclined holder enables the very shallow incident angle of argon ion for sputtering to be used. In consequence, depth profiles of Ga LMM and Al KLL from a GaAs/AlAs multilayer specimen showed a much better depth resolution compared to those obtained by the conventional method. We also measured the Auger depth profiles of a Si/Ge multiple delta-layer specimen using the inclined holder and confirmed. A Ge mono-layer can be profiled.