2014 年 20 巻 3 号 p. 221-225
Oxidation reaction efficiency of the embedded Si atoms in the diamond-like carbon (DLC) film was studied with a combination of the broad O-atom beam, high-speed chopper wheel and synchrotron radiation photoelectron spectroscopy (SR-PES). The high-speed chopper wheel converted the translational energy distribution of O-atom into spatial distribution on the DLC surface. High spatial and energy resolutions of SR-PES allow studying the difference in oxidation states of Si atoms in different translational energies. It was confirmed that the SiO2 was formed by the high-energy collision conditions of O-atoms, whereas sub-oxides are formed with the low-energy collisions. The efficiency of SiO2 formation at 9 eV-collision is evaluated to be 4 times greater than that at 2 eV-collision.