Insulating Ga2O3 layer formation at SiO2/β-Ga2O3 interface during oxygen annealing at 1000℃ and its impact on Ga2O3 MOS interface characteristics

The 67th JSAP Spring Meeting 2020

セッションID: 14p-B401-15

会議情報

主催: The Japan Society of Applied Physics

会議名: 応用物理学会春季学術講演会

回次: 67

開催地: 上智大学四谷キャンパス

開催日: 2020/03/12 - 2020/03/15

Insulating Ga₂O₃ layer formation at SiO₂/β-Ga₂O₃ interface during oxygen annealing at 1000℃ and its impact on Ga₂O₃ MOS interface characteristics

*QIN MAO, Koji KITA

著者情報

会議録・要旨集フリー

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