Oxide-based 3D-integrated memory devices

抄録

As AI technology evolves and the demand for high-performance computing increases, high-capacity, low-power, and high-bandwidth memory is becoming more important. However, we are reaching the technical difficulty of achieving two-dimensional device scaling and computer architectures with off-chip memory. This article introduces a research progress on oxide-based 3D-integrated memory devices to break through this difficulty. In particular, the research on the memory devices using HfO₂-based ferroelectrics as memory element and oxide semiconductor as channel material is discussed.