砥粒加工学会誌
Online ISSN : 1880-7534
Print ISSN : 0914-2703
ISSN-L : 0914-2703
半導体ベアウエハ表面ナノ欠陥の超解像光学式計測に関する研究
工藤 良太, 高橋 哲, 高増 潔
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ジャーナル フリー

2012 年 56 巻 10 号 p. 709-710

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抄録
In the light scattering measurement of the nano-scale defects on the surface of bare silicon wafer, detecting defects becomes so difficult that defects become small. It is because the signals from defects become weak and the influence of the noise from micro roughness becomes large relatively. In order to realize high signal-to-noise ratio detection, we propose the novel optical inspecting method using Gaussian spot illumination shift. It is the method of reconstructing scattering efficiency distribution of a sample domain including defects by carrying out computer processing using the distribution information of illumination, and the nano-shift of illumination. In this report, the validity of proposed method by the computer simulation was verified. The high signal-to-noise ratio result compared with the conventional technique was obtained in the simulation to the sample which has a defect with noise assuming micro roughness.
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© 2012 社団法人 砥粒加工学会
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