抄録
Many physical and chemical techniques are used in the fabrication processes of semiconductor devices exemplified with large scale integration (LSI).
Photoetching processes are of growing importance in the drive toward more complex microelectronics with smaller dimensions. The organic compounds contained photosensitive or radiosensitive materials (photoresists or electron beam and x-ray resists) are used in these processes as masking materials, and it is necessary to know the thermal characteristics of them in order to yield the high accuracy fabrication.
Meanwhile, the thermoanalytical methods are considered the best technique to know the thermal characteristics of organic materials.
The purpose of this report is to describe the application of thermoanalytical methods to the photoetching processes in the LSI fabricatiõn. The investigations indicate that the thermoanalytical methods are very useful to select the resists materials and to establish the best treatment conditions in photoetching processes.
