抄録
Techniques and procedures are presented for measuring strain directly on thin-film polysilicon at high temperatures. Narrow platinum lines are deposited 250μm apart on tensile specimens that are 3.5μm thick. Strain is measured by laser-based interferometry at temperatures up to 600℃. Specimens that are 600μm wide are heated resistively, and narrower specimens (50μm wide) are heated in a windowed furnace. Measurements of the coefficient of thermal expansion, Young's modulus, stress-strain, and creep behavior are presented.
