21712 CMP用研磨パッドの幾何形状のポリッシュプロセスへの影響(平坦化,OS.12 機械工学が支援する微細加工技術(半導体・MEMS・NEMS))
詳細
It experiments on the influence that the geometry of CMP pad (depth of groove, presence of sub-pad) gives to planarity and wafer edge polish profile. The validity of the experiment is verified by the simulation. (1) The grooved pad makes planarity worse. To improve planarity, it is effective to remove the sub-pad. There is a correlation between the experiment and simulation. (2) The difference is seen about the polish profile of the wafer edge between a simulation and real polish. It is thought that Wafer Edge Roll-Off is a cause of the difference.
