日本機械学会関東支部総会講演会講演論文集
Online ISSN : 2424-2691
ISSN-L : 2424-2691
セッションID: 21413
会議情報
21413 シリコンウェーバ製造時の研磨におけるウェーハエッジ形状の影響(CMP,OS.1 機械工学が支援する微細加工技術(半導体・MEMS・NEMS),学術講演)
福田 明福田 哲生檜山 浩國辻村 学土肥 俊郎黒河 周平
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会議録・要旨集 フリー

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抄録
Optimum wafer edge profile to reduce Roll-Off Amount (ROA) was investigated in the polishing process of silicon wafer manufacturing. The distribution of removal rate at wafer periphery for both double-side and single-side polish was estimated by calculating the contact pressure on wafer surface using FEM analysis. It is suggested from the calculation that reduction of ROA would be achieved by shortening the edge width of wafer in both double-side and single-side polish cases. In industry applications, however, other factors such as safety of wafer handling, durability of polishing pad, and feasibility of fabrication, should be taken into account comprehensively during determining the minimum wafer edge width.
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