抄録
In this paper, polishing performance of ECP-C, which is a kind of ECMP(Electro-Chemical Mechanical Polishing), at Cu clear process is discribed. After Cu clear, it was found that erosion was below 10nm and Cu residue was not observed. However, it was also found that dishing was over 100nm and it significantly increased with over polish time. This increase is assumed of electrochemical ething due to low electrical insulation property of Cu complex formed in ECP-C. Therefore, it is considered that the improvement in electrical insulation property is necessary for applying ECP-C to Cu clear process.
