抄録
In the production process such as the semiconductor wafer slicing, the processing methods that used free abrasives wire saw are extensively adopted. However, these SiC grains after use are unfavorable from an environmental perspective, due to the fact that they become industrial wastes, and is also not very efficient. For these reasons, the development of the wire with fixed abrasives is required by industry. The major objects of this paper is to make the fixed abrasive wire saw apply to high cost production in semiconductor industries such as wafer slicing, and provide the industry with the effective processing parameter. Effects of processing parameters on the performance of fixed diamond wire sawing processes are investigated by using the Taguchi method for this design of experiment (DOE). The performance discussed in this paper includes machined surface roughness of the wafer, material removal rate and wear of the wire and kerf width. The processing parameters are grain size, wire tension, slurry, wire speed and feed rate. An L_9(3^4) orthogonal array, signal-to-noise (S/N) ratio are employed to analyze the effect of these processing parameters. The analysis of the result shows that the optimal combinations for good surface roughness are small grain size, high wire speed, and low feed rate. Wire speed and feed rate are positively related to material removal rate. The use of slurry results in a larger removal rate and larger wear of the wire. Furthermore, it was determined that the wire tension does not have any significant effect on the performance.
