Enhancement of Peel Strength at Interface between Spattered Films and Substrate Materials by Fast-Atom-Beam Irradiation(M^4 processes and micro-manufacturing for science)

抄録

We tried the method to increase the peel strength between thin film metals and various substrate materials using saddle Field FAB (Fast Atom Beam) sources. It is notable that the peel strength was increased more than several times for all substrates than those who were not modified by surface activation using FAB irradiation. Highest peel strength was observed at the coupling of Si and metals in both case of Ar irradiation and SF_6 reactive etching by FAB. This surface activation process by FAB is expected as one of the available techniques for pre treatment of the film deposition of electrical.