抄録
We conducted fabrication process of three-dimensional (3D) mold using spin-on-glass (SOG) material as a positive electron beam (EB) resist and buffered hydrofluoric acid as the developer. The SOG resist depth control was demonstrated by the changing the EB acceleration voltage or the changing the EB dose. In either case, 3D patterning was possible. In particular, nanometer order pitch holes arrays were obtained to optimize EB dose at high voltage acceleration. Using delineated resist patterns as a 3D mold, UV nanoimprint lithography was carried out and nanometer size patterns were faithfully replicated.
