抄録
There are high demands for inspecting way of bare Si wafer working surface in several tens nm scales with progressing of nanoscale processing technology. However, it is difficult to detect nanoscale defects by conventional method using scattered light because its intensity is extremely weak when defects are very small. Then, we conduct research for inspecting method of fine particulate defects by using liquid probe. It uses volatile and inactive liquid for probe capturing automatically plural defects simultaneously by applying property of liquid which build conical film around particles on Si wafer surface with its evaporation. In this report, we conducted basic experiment to verify our proposed concept and showed possibility of finding fine particulate defects on Si wafer.
