抄録
With the development of nanotechnology in recent years, many researchers have focused on the development of nanomaterials and nanostructures such as nanowires. To apply these nanomaterials and nanostructures into nanodevices, there are great needs of the quantitative measurement of electrical properties of materials in an infinitesimal area. Recently, we proposed a novel microwave atomic force microscopy (M-AFM). M-AFM probe was fabricated by forming a microwave transmission line on the probe cantilever. By combining the AFM technique with microwave-based measurement, M-AFM has the ability to sense the topography and microwave image simultaneously with a high spatial resolution. In this study, we tried to evaluate quantitatively electrical properties of single crystalline aluminum nanowire. Using M-AFM, both measurements of the surface topography and the microwave response of single crystalline aluminum nanowire were succeeded. As a result, the electrical property of microwave signals was detected as the difference of the voltage value.
