抄録
Electric and mechanical properties of the electroplated copper thin film interconnections vary drastically depending on not only the size of grains but also the crystallographic characteristics of grain boundaries. In particular, the effect of the quality of grain boundaries plays very important role on the physical properties when the volume ratio of grain boundaries increases with the decrease of average grain size. In this study, in order to evaluate the damage due to the electro migration (EM) of electroplated copper interconnections, the tensile strength at grain boundaries in the interconnection was measured by the micro-tensile test method using Focused Ion Beam (FIB) technique. The micro-texture dependence of the tensile strength and the change in the strength of electroplated copper thin-film interconnections after the EM test were evaluated quantitatively.
