抄録
This paper describes thermal and electrical properties of Si power MOSFET. The problem of hot spot in submicron scla Si MOSFET has been widely known. Recently, Si power MOSFET is key device in a lot of area, for example car electronics. In Si power MOSFET, high voltage is applied and high current is generated. Therefore, heat generation becomes higher and thermal management is important. In this paper, thermal and electrical properties of Si power MOSFET is evaluated with Electro-Thermal Analysis and fundamental heat generation phenomenon of Si power MOSFET is discussed. Further, generation of hot spot is also discussed.
