精密工学会誌論文集
Online ISSN : 1881-8722
Print ISSN : 1348-8724
ISSN-L : 1348-8716
論文
光散乱法を用いたナノパーティクル測定機の開発
-標準ナノ粒子を用いた検出精度と洗浄効果の評価-
安 弘佐々木 都至遠藤 勝義森 勇藏
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2006 年 72 巻 10 号 p. 1296-1300

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The measuring system for particles with diameter of nanometer order sizes on a Si wafer surface using a laser light-scattering method has been developed. To estimate this measuring system, the measurement of a standard particle on a bare Si wafer was attempted and it was verified that this measuring system could measure particle size with a sensitivity of about 24nm. And, the washing for the Si wafer by using a wet cleaning method was attempted to estimate the wet cleaning effect for nanoparticles on its surface. Consequently, it could be verified that the wet cleaning is an effectual method to remove standard nanoparticles of less than diameter of 30nm on Si wafer surface.
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© 2006 公益社団法人 精密工学会
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