GaAs基板上フラーレンC₆₀の結晶成長とC₆₀ doped GaAsの電気的特性

抄録

Intensity oscillations of reflection high-energy electron diffraction are observed during epitaxial growth of a C₆₀ layer on GaAs substrates. The frequencies of the oscillations coincide well with the growth rates of C₆₀ layers, suggesting that C₆₀ layers grow by layer-by-layer growth mode. C₆₀ uniformly doped and delta-doped GaAs layers are grown by migration enhanced epitaxy method. C₆₀ uniformly doped GaAs layers show highly resistive characteristics, suggesting that C₆₀ molecules cannot be decomposed into isolated C atoms. Electrochemical capacitance-voltage profiles of C₆₀ delta-doped GaAs layers suggest that C₆₀ molecules in GaAs lattice produce deep electron traps which can be charged or discharged by applied electrical fields.