共鳴多光子イオン化スパッタ中性粒子質量分析法によるSi/Ti多層膜の深さ方向分析 —SIMS/SNMSによるマトリックス効果の検証—

西野宮 卓; 久保田 直義; 林 俊一; 竹中 久貴

doi:10.1380/jsssj.31.386

論文

共鳴多光子イオン化スパッタ中性粒子質量分析法によるSi/Ti多層膜の深さ方向分析

—SIMS/SNMSによるマトリックス効果の検証—

西野宮卓, 久保田直義, 林俊一, 竹中久貴

著者情報

ジャーナルフリー

2010 年 31 巻 8 号 p. 386-391

DOI https://doi.org/10.1380/jsssj.31.386

詳細

抄録

Depth profiling of multilayered Si/Ti samples using resonance-enhanced multiphoton ionization-sputtered neutral mass spectrometry (REMPI-SNMS) has been compared with that using SIMS to study matrix effects of REMPI-SNMS. We have discussed matrix effects at interface and in the Ti bulk containing oxygen by using Ar⁺ and O₂⁺ beam as primary ion beam. It is found that the matrix effect at the interface for REMPI-SNMS has been negligible small. On the other hand, the result of REMPI-SNMS measurement has been affected by oxygen in the bulk due to the drastically change of secondary ion yield. We suggest that SIMS/SNMS depth profiles with different primary ions are useful to understand matrix effects.

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