抄録
Magnetoresistive films used for read-heads of hard disc drives, magnetic random access memory devices, and magnetic sensors are fabricated by magnetron sputtering method. Since giant magnetoresistive and tunnel magnetoresistive films are composed of multilayered films, in which the thickness of each layer is in the nanometer range, high accuracy in thickness control and thickness uniformity is required for the sputtering systems. Film properties are also influenced by the quality of the vacuum during the fabrication process. This article addresses such issues on the deposition of magnetoresistive films, and introduces mass-production sputtering technologies capable of fabricating high quality multilayers. Furthermore, fabrication methods of the tunnel barrier in tunnel magnetoresistive devices are also described.
