One-dimensional silicon nanoribbons (SiNRs) have the potential applying to future electronics devices because its compatibility with current silicon-based electronics devices and the theoretical outstanding electronic properties such as size-dependent band gap. Here, with the deposition of Si on Ag(111) surface, we have grown SiNRs. We investigate SiNRs on Ag(111) with a combination of scanning tunneling microscopy(STM), atomic force microscopy(AFM) and density functional theory (DFT) calculations. We obtained the atomic resolution STM and AFM images, which reveal that SiNRs have the same width and align along the equivalent orientations of Ag(111). The main body of SiNRs was found symmetric about the long axes of ribbons, but the terminals of SiNRs break the symmetry. The observations indicate that SiNRs are stable under room temperature. In order to determine the detailed atomic structure of SiNRs, based on the STM and AFM observations, we performed the DFT calculations. The calculation results reveal the buckled single-layer structure of SiNRs, which agrees well with the experimental results.
