Abstract
We studied the high sensitivity of a chemically amplified resist composed of a matrix resin, a dissolution inhibitor and an acid generator. We evaluated the dependence of sensitivity of the resist upon post exposure baking (PEB) condition and acid generators. Triphenylsulfonium triflate (S-Tf), diphenyliodonium triflate (I-Tf), triphenylsulfonium antimonate (S-Sb), and diphenyliodonium antimonate (I-Sb) were used. The higher the PEB time and the temperature, the better the sensitivity of the resist. The higher the concentration of S-Tf, the better this sensitivity of the resist. When 3 wt% of acid generator was added to the resist, the sensitivity of the resist was S-Tf (12.5μC/cm2) <S-Sb (10.0μC/cm2) <I-Tf (7.0μC/cm2) <I-Sb (5.0μC/cm2). When iodonium ion as cation was used, the sensitivity of the resist was better. When antimonate ion as anion was used, the sensitivity of the resist was better.
