固相とレーザーの組み合わせ結晶化による結晶方位制御の可能性

抄録

A novel technique of location and orientation control of Si crystal grain by combining metal-induced solidphase annealing and excimer laser annealing (ELA) is demonstrated. Two solid-phase annealing processes were investigated.(1) Metal (Ni) nano-imprint at the a-Si film surface is used for the purpose of creating {111} oriented Si crystal nuclei which act as the seed for the subsequent crystallization using ELA. The annealing to form nuclei at the imprinted sites was carried out at temperatures below 450 °C. ELA using XeCl laser of the sample resulted in the formation of 2.5 μm-sized Si grains at the imprinted sites, while {111} orientation was not observed.(2) The starting a-Si film is deposited on SiO₂ substrate having cone-shaped shallow pits. Ni-metal induced lateral crystallization (Ni-MILC) is used to form highly {110} oriented polySi. After XeCl-laser-based ELA, 2.5 μm-sized Si grains having the same orientation as that determined by NiMILC were produced at the pit sites. It suggests that location and orientation control is possible by combining MILC and ELA.