次世代TFT作製に向けたシリコン結晶化技術

抄録

Thin film transistor, which had been in practical use with amorphous silicon (a-Si) as base material in 80's, blossomed into poly-Si TFTs by a driving force of the Excimer Laser re-crystallization technology. The feature of the Excimer laser fits for the lateral growth of Si thin films, i.e., its characteristics such as short wavelength, high power density, low coherency and short pulse enable the progress of the advanced “Phase Modulated Excimer Laser Annealing (PMELA)” method. We have developed a position-controlled large grain Si arrays process using the PMELA method. Excimer laser still requires many refinement to achieve the practical use of the “System displays” .