抄録
The effect of Si precipitation on the bonding damage at the Al-1 mass%Si film/transistor substrate interface has been investigated. Wedge shaped Si precipitates (1–3 μm high) grew on the PSG/Si substrate during the annealing process before soldering and wire bonding. The deformed layer in the Al-1 mass%Si film, after bonding, was almost to the top of the wedge shaped Si precipitates and hence this may cause damage in the PSG/Si system. The morphologies of the Si precipitates were greatly influenced by the substrate structure; there was lateral shaped Si precipitation with less than 0.5 μm height when substrate was Si. This may be due to solid phase epitaxial growth of Si precipitates on Si. It was also found that bonding damage decreased substantially by replacing the PSG/Si substrate with Si substrate.
