Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (II): Semiconductor Distributed Bragg Reflectors

Toshihiko BABA; Tomonobu KONDOH; Fumio KOYAMA; Kenichi IGA

doi:10.1007/s10043-995-0323-4

Toshihiko BABA, Tomonobu KONDOH, Fumio KOYAMA, Kenichi IGA

著者情報

キーワード: surface emitting laser, thermal resistance, finite element method, GaInAsP/InP, GaAs/AlAs

ジャーナルフリー

1995 年 2 巻 4 号 p. 323-325

DOI https://doi.org/10.1007/s10043-995-0323-4

詳細

抄録

We have numerically analyzed some thermal characteristics of cw long wavelength surface emitting lasers with epitaxially grown semiconductor distributed Bragg reflectors (DBRs). It was shown that the device thermal resistance for GaAs/AlAs DBRs epitaxially fused to GaInAsP/InP emitting layers is 1/3 of that for GaInAsP/InP DBRs and almost comparable to that for the optimum dielectric cavity. The threshold current lower than 10 mA and the electrical resistance lower than 100 Ω are necessary to obtain the cw operation beyond room temperature.

責任著者(Corresponding author)

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