抄録
Because of insulate and high thermal conductivity, AlN ceramics are the most promising materials for the semiconductor manufacturing process. AlN ceramics exhibited different resistivity and microstructure. The effect on AlN ceramics with additions of Y2O3 and La2O3 was investigated by scanning electron microscope(SEM), X-ray diffraction(XRD), and resistivity measurements. While using Y2O3, AlN ceramics showed low resistivity at 873K ; the resistivity was 8E+5 Ω•m for the secondary phase that was low resistivity at high temperature existed at the triple point of AlN particle. In contrast, the secondary phase of La2O3 doped AlN was discharged from AlN in sintering process, and resulted in the resistivity increased to 2E+7Ω•m.
