抄録
Ba(Zr1-xTix)O3 (BZT) compounds have been receiving great attention for various electronic device applications, such as multilayer ceramic capacitors and dynamic random access memories, etc. Also, the BZT-based bulk materials are known to change their dielectric characteristics according to the Zr / Ti ratio. However, the effect of Zr/Ti ratio on the microstructure and dielectric properties of BZT thin films has not been understood fully up to now. Therefore, in this study, fabrication of Ba(Zr1-xTix)O3 thin films on substrates have been carried out by the chemical solution deposition (CSD), because the CSD process has several advantages such as feasibility of composition control. The relationship between Zr/Ti ratio and crystallization behavior of BZT precursor films was investigated. Furthermore, the electrical properties of the synthesized BZT thin films were also evaluated.
