抄録
Oxidation behavior of Al4SiC4-SiC sintered bodies, which were synthesized by using Al, Si and C powders, was investigated under a constant temperature and changing temperature.A protective layer was formed around the surface of the sintered bodies heated in air.The diffusion of oxygen under a changing temperature was sufficiently inhibited by this protective layer of the sintered bodies, because this layer consisted of mullite or mullite and silica.Consequently, the sintered bodies indicated a superior oxidation resistance. Thermal conductivity and temperature dependence of electrical resistivity of the sintered bodies were measured from 373K to 1273K.Thermal conductivity increased with the increase of SiC amount.Current-voltage characteristics showed a linear relationship, and the characteristics have an ohmic region.Electrical resistivity, obtained from the current-voltage characteristics, increased with the increase of Al4SiC4 amount, varied significantly depending on temperature.Further, the difference in electrical resistivity was small at high temperature.
