抄録
This presentation describes the design and performance of integrated passives devices (IPDs) on LTCC wiring substrates developed for RF-module applications. The high-Q IPD has been directly fabricated on an LTCC wiring wafer. The LTCC wiring substrate can offer dense interconnects between the integrated passive circuits and the functional devices mounted above the IPD. This technology combines the advantages of LTCC and IPD and is promising for the miniaturization of future RF-modules.
