抄録
We use ultrahigh-resolution transmission electron microscopy (TEM) and atomic-scale spectroscopy in a rare-earth doped silicon carbide (RE-SiC) to examine in detail the mechanistic nature of the intergranular cracking events that occur along the RE-decorated interface between the SiC grains and the grain-boundary phase. We conclude that for optimal toughness, the relative elastic modulus across the grain-boundary phase and the interfacial fracture toughness are the most critical material parameters; both can be altered with judicious choice of rare-earth additives.
