抄録
Cubic Aluminum nitride (c-AlN) is a promising component for electronic applications. In this study c-AlN coatings were synthesized by Atmospheric Plasma Spray (APS) process using reaction of feedstock Al powders with nitrogen plasma. Al powders were supplied to the plasma stream by carrier gas Ar and reacted with surrounding N2 plasma, then deposited onto substrate. The obtained coatings were c-AlN/Al mixture at 150 mm spray distance and the nitride content increases gradually with increasing spray distance, the coatings almost c-AlN at 300mm. However, coatings thickness decreased with increasing spray distance. Using carrier gas N2 enable to fabricate thick c-AlN coating.
