Preparation of TiCx films by semiconductor laser chemical vapor deposition

抄録

TiC_x films were prepared by laser chemical vapor deposition (LCVD) with tetrakis (diethylamido) titanium (TDEAT) and acetylene (C₂H₂) as the source materials. The effects of laser power (P_L), pre-heating temperature (T_pre) and fraction of C2H2 (F_C2H2) on the crystal structure, microstructure and deposition rate of TiC_x films were investigated. TiC_x films in a single phase with a cauliflower-like texture and columnar cross section were obtained. The compositional ratios of C to Ti (x) were in the range of 0.63-0.78 at a deposition temperature (T_dep) of 973 to 1143 K. The deposition rate (R_dep) of TiC_x films increased with decreasing F_C2H2, T_pre and P_L, showing a maximum Rdep of 60 µm/h at F_C2H2 = 0.4, P_L = 150 W, T_pre = 673 K.