日本セラミックス協会 年会・秋季シンポジウム 講演予稿集
24th Fall Meeting of The Ceramic Society of Japan
セッションID: 2O27
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Joining of SiC by Al infiltrated TiC tape interlayer
*Wubian TianHideki KitaHideki HyugaNaoki Kondo
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抄録
SiC ceramics were successfully joined by Al infiltrated TiC tapes at 900-1100 degree C for 0.5-2 h in vacuum. Phase constituents, microstructure and mechanical strength of the prepared SiC joints were characterized. The prepared SiC joints display dense interlayer and crack-free interface. The interlayer primarily consists of TiC and Al phases, together with small amount of TiAl3 and trace of Al4C3. With increasing the joining temperature or time, the interface layer either thickens or grows to multiple layers. The bending strengths of the SiC joints are higher than 190 MPa as bonded at present conditions, and are closely related with the property of interface and interlayer.
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© The Ceramic Society of Japan 2011
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