Preparation of highly oriented beta-SiC films by laser chemical vapor deposition

抄録

beta-SiC films were prepared by laser chemical vapor deposition (LCVD) using a diode laser with hexamethyldisilane (C₆H₁₈Si₂) precursors. The effects of laser power (P_L) and total pressure (P_tot) in the reaction chamber on deposition rate (R_dep), microstructure and preferred orientation were investigated. The preferred orientation of beta-SiC films changed from (111) to non-orientation to (220) with increasing P_L and P_tot. The (111)-oriented, non-oriented and (220)-oriented beta-SiC film showed the dense, cauliflower-like and columnar microstructure, respectively. The highest Lotgering factor (LF_(hkl)) of (111) and (220) films was 1.0 and 0.35 at P_L=120 W, P_tot=200 Pa and P_L=160 W, P_tot=600 Pa, respectively.