抄録
SiO2 thin layer was coated on cBN (cBN/SiO2) by rotary chemical vapor deposition (RCVD) using tetraethoxysilane (TEOS) as a precursor. Al2O3-cBN/SiO2 composite was compacted by spark plasma sintering (SPS). The phase transformation temperature of cBN to hBN in Al2O3-cBN/SiO2 composite was 1773 K, 200 and 100 K higher than that in Al2O3-cBN/Ni and Al2O3-cBN composites, respectively. The highest relative density of Al2O3-cBN/SiO2 composite was 99.5% at 1673 K and 30 vol% cBN with 1.9 mass% SiO2. The maximum hardness of Al2O3-cBN/SiO2 was 28 GPa for Al2O3-30 vol% cBN/SiO2 (SiO2 content: 1.9 mass%) composite sintered at 1673 K and 100 MPa.